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  Datasheet File OCR Text:
 Darlington
2SD2081
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=-0.5A VCB=10V, f=1MHz 2SD2081 10max 10max 120min 2000min 1.5max 2.0max 60typ 95typ V V MHz pF
13.0min
Equivalent circuit
B
C
(2k) (200) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2081 120 120 6 10(Pulse15) 1 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Driver for Solenoid, Motor and General Purpose
(Ta=25C) Unit
External Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 BCE
0.2
0.80.2
a b
o3.30.2
Weight : Approx 2.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 15
50
VCE( sat ) - IB Characteristics (Typical)
3
I C - VBE Temperature Characteristics (Typical)
10 (V C E= 4V)
1
A 0m
m
5mA
A
3mA
8 2 Collector Current I C (A)
Collector Current I C( A)
10
2m A
6
1mA
mp)
p) ase Tem 25C (C
2
IB=0.5mA
0
0
1
2
3
4
5
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
-30C (C
125C
1A
(Cas
5
0. 7m A
1
5A
ase Tem
e Te
4
p)
IC=10A
2
3
Collector-Emitter Voltage V C E( V)
Base Current I B( mA)
Base-Emittor Voltage V B E( V)
h FE - IC Characteristics (Typical)
(VCE=4V) 20000 10000 DC Cur rent Gain h F E 5000
hFE - IC Temperature Characteristics (Typical)
(VCE=4V) 20000 10000 DC Cur rent Gain h F E 5000
j - a( C/W)
j-a - t Characteristics
5
Typ
12
1000 500
5C
25 C
0C
1000 500
Transient Thermal Resistance
1
-3
0.5
100 50 30 0.03
100 50 30 0.03
0.1
0.5
1
5
10
0.1
0.5
1
5
10
0.2
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(VCE=12V) 120 30
Safe Operating Area (Single Pulse)
30
10 m
P c - T a Derating
Typ
100 Cut- off Fr equ ency f T( MH Z) Collector Curre nt I C( A) 10 5
1m
s
s
Maximu m Power Dissipa tion P C( W)
W ith
80
DC
20
In fin ite he
60
at
1 0.5 Without Heatsink Natural Cooling 0.1
si nk
40
10
20
Without Heatsink 2 5 10 50 100 200 0
0 -0.05 -0.1
-0.5
-1
-5
-10
0.05 3
0
25
50
75
100
125
150
Emitter Current I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
144


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